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2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

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    Buy cheap 2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L) from wholesalers
     
    Buy cheap 2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L) from wholesalers
    • Buy cheap 2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L) from wholesalers
    • Buy cheap 2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L) from wholesalers
    • Buy cheap 2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L) from wholesalers
    • Buy cheap 2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L) from wholesalers
    • Buy cheap 2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L) from wholesalers
    • Buy cheap 2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L) from wholesalers

    2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

    Ask Lasest Price
    Brand Name : Toshiba
    Model Number : 2SA1943-O(Q)
    Price : Email us for details
    Payment Terms : T/T, Western Union
    Supply Ability : 5000
    Delivery Time : 1day
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    2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

    2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole

    Toshiba
    Product Category:Bipolar Transistors - BJT
    RoHS:Details
    Through Hole
    TO-3P-3
    PNP
    Single
    230 V
    230 V
    5 V
    1.5 V
    15 A
    150 W
    30 MHz
    -
    + 150 C
    2SA
    Tray
    Brand:Toshiba
    Continuous Collector Current:- 15 A
    DC Collector/Base Gain hfe Min:55
    DC Current Gain hFE Max:160
    Height:26 mm
    Length:20.5 mm
    Product Type:BJTs - Bipolar Transistors
    Subcategory:Transistors
    Technology:Si
    Width:5.2 mm
    Unit Weight:0.238311 oz

    Power Amplifier Applications

    • High collector voltage: VCEO= −230 V (min)
    • Complementary to 2SC5200
    • Recommended for 100-W high-fidelity audio frequency amplifier output stage.



    Specifications

    • Manufacturer: Toshiba
    • Transistor Type: NPN
    • Package Type: TO-3PL
    • Maximum Power Dissipation: 150W
    • Collector Emitter Voltage (VCEO): 230V
    • Maximum Collector Current: 15A
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
    • Frequency: 30MHz
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C TJ
    • Part Status: Obsolete




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